-9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V RDS(ON) = 0.025 W @ VGS = -4.5 V Low gate charge (21nC typical). High performance trench technology for extremely low.
load switching and power management, battery charging circuits, and DC/DC conversion.
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-9 A, -30 V. RD.
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Thes.
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